Electron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique

Title
Electron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique
Authors
김지훈박용주박영민송진동신재철이정일김태환
Keywords
Eectrical properties; Photoluminescence; Molecular beam epitaxy; C-V; Carrier confinement effect
Issue Date
2003-10
Publisher
새물리
Citation
VOL 47, NO 4, 273-278
URI
http://pubs.kist.re.kr/handle/201004/27203
Appears in Collections:
KIST Publication > Article
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