A nonvolatile memory based on reversible phase changes between fcc and hcp

Title
A nonvolatile memory based on reversible phase changes between fcc and hcp
Authors
안동호강대환정병기권혁순권민호이태연정증현이택성김인호김기범
Keywords
Amorphous semiconductor; chalcogenide; nonvolatile memory; phase transformation; phase-change memory (PCM)
Issue Date
2005-05
Publisher
IEEE Electron Device Letters
Citation
VOL 26, NO 5, 286-288
URI
http://pubs.kist.re.kr/handle/201004/27254
ISSN
0741-3106
Appears in Collections:
KIST Publication > Article
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