Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates

Title
Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates
Authors
S. MaikapJe-Hoon LeeR. MahapatraSamik Pal노영수최원국S.K. RayDoh-Y Kim
Keywords
HfO2; High-k gate dielectric; p-Si; plasma nitridation; CET
Issue Date
2005-02
Publisher
Solid-State Electronics
Citation
VOL 49, NO 4, 524-528
URI
http://pubs.kist.re.kr/handle/201004/27268
ISSN
0038-1101
Appears in Collections:
KIST Publication > Article
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