DSpace at KIST: Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries

Browse

My Repository

DSpace at KISTKIST Publication Article

Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries

Title: Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries

Authors: 유재수; 송진동; 이용탁; 임한조

Keywords: SiOx; Impurity free intermixing; InGaAs/GaAs; Quantum well

Issue Date: 2005-02

Publisher: Applied physics. A, Materials science & processing

Citation: VOL 80, 847-850

URI: http://pubs.kist.re.kr/handle/201004/27658

ISSN: 0947-8396

Appears in Collections:: KIST Publication > Article

Files in This Item:

Export: RIS (EndNote); XLS (Excel); XML

Show Full Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE