Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries

Title
Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries
Authors
유재수송진동이용탁임한조
Keywords
SiOx; Impurity free intermixing; InGaAs/GaAs; Quantum well
Issue Date
2005-02
Publisher
Applied physics. A, Materials science & processing
Citation
VOL 80, 847-850
URI
http://pubs.kist.re.kr/handle/201004/27658
ISSN
0947-8396
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE