Influence on the growth temperature for one-dimensional GaN nanostructures by halide vapor-phase epitaxy
- Influence on the growth temperature for one-dimensional GaN nanostructures by halide vapor-phase epitaxy
- 변윤기; 한경섭; 최성철
- GaN; one-dimensional nanostructure; halide vapor-phase epitaxy; single crystal growth
- Issue Date
- Journal of ceramic processing research / International organization for ceramic processing
- VOL 6, NO 3, 197-200
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- KIST Publication > Article
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