Influence of impurity-free vacancy diffusion on the optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells electroabsorption modulator structure

Title
Influence of impurity-free vacancy diffusion on the optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells electroabsorption modulator structure
Authors
유재수송진동이용탁임한조
Keywords
In0.53Ga0.47As; In0.52Al0.48As; multiple quantum wells; impurity-free vacancy diffusion
Issue Date
2005-08
Publisher
Semiconductor science and technology
Citation
VOL 20, NO 8, 851-855
URI
http://pubs.kist.re.kr/handle/201004/28206
ISSN
0268-1242
Appears in Collections:
KIST Publication > Article
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