DSpace at KIST: Influence of impurity-free vacancy diffusion on the optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells electroabsorption modulator structure

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Influence of impurity-free vacancy diffusion on the optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells electroabsorption modulator structure

Title: Influence of impurity-free vacancy diffusion on the optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells electroabsorption modulator structure

Authors: 유재수; 송진동; 이용탁; 임한조

Keywords: In0.53Ga0.47As; In0.52Al0.48As; multiple quantum wells; impurity-free vacancy diffusion

Issue Date: 2005-08

Publisher: Semiconductor science and technology

Citation: VOL 20, NO 8, 851-855

URI: http://pubs.kist.re.kr/handle/201004/28206

ISSN: 0268-1242

Appears in Collections:: KIST Publication > Article

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