Effects of metastable crystallization of Ge2Sb2Te5 thin films and scaled contact dimension on phase change random access memory

Title
Effects of metastable crystallization of Ge2Sb2Te5 thin films and scaled contact dimension on phase change random access memory
Authors
김용태김성일염민수이창우성만영
Keywords
memory; phase change; Ge2Sb2Te5; metastable FCC; scaling; contact area; PRAM
Issue Date
2005-07
Publisher
The International Conference on Electrical Engineering 2005 (ICEE2005)
URI
http://pubs.kist.re.kr/handle/201004/28281
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE