Characteristics of Cu/PPALD (pulse-plasma atomic layer deposited) WN/methyl silsequioxane/Si for multi-level Cu interconnection

Title
Characteristics of Cu/PPALD (pulse-plasma atomic layer deposited) WN/methyl silsequioxane/Si for multi-level Cu interconnection
Authors
이창우김용태
Keywords
pulse plasma; WN
Issue Date
2005-07
Publisher
The international conference on electrical engineering 2005 (ICEE2005)
URI
http://pubs.kist.re.kr/handle/201004/28358
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE