Preparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate material

Title
Preparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate material
Authors
장호정서강모박지호공수철심선일김용태손창식Makoto Ishida
Keywords
field effect transistor; (Bi,La)Ti3O12 (BLT); Y2O3 buffer layer; ferroelectric gate film
Issue Date
2004-12
Publisher
Journal of the Korean Physical Society
Citation
VOL 45, S886-S889
URI
http://pubs.kist.re.kr/handle/201004/28377
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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