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dc.contributor.author남형도-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author이정일-
dc.contributor.author양해석-
dc.contributor.author곽호상-
dc.contributor.author조용훈-
dc.date.accessioned2015-12-02T08:38:47Z-
dc.date.available2015-12-02T08:38:47Z-
dc.date.issued200512-
dc.identifier.citationVOL 47, NO 6, 1002-1005-
dc.identifier.issn0374-4884-
dc.identifier.other22735-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/28969-
dc.publisherJournal of the Korean Physical Society-
dc.subjectElectronic structure-
dc.subjectquantum dots-
dc.subjectintersubband transition-
dc.subjectinfrared photodetector-
dc.titleElectronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure-
dc.typeArticle-
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