Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering

Title
Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering
Authors
김일두임미화강경태김호기최시영
Issue Date
2006-07
Publisher
Applied physics letters
Citation
VOL 89, 022905-1-022905-3
URI
http://pubs.kist.re.kr/handle/201004/29313
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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