Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources

Title
Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources
Authors
송진동최원준이정일김종민장기수이용탁
Keywords
InP; InGaAs; Decomposition source; Compound source; Multi-quantum wells; MBE; Arsenic; Phosphorus
Issue Date
2006-04
Publisher
Physica E, Low-dimensional systems & nanostructures
Citation
VOL 32, 234-236
URI
http://pubs.kist.re.kr/handle/201004/29717
ISSN
1386-9477
Appears in Collections:
KIST Publication > Article
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