InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3㎛ With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy

Title
InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3㎛ With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy
Authors
김광웅조남기유성필송진동최원준이정일Jung Ho PARK
Keywords
InAs/GaAs quantum dot; laser diode; atomic layer epitaxy; simultaneous lasing
Issue Date
2006-10
Publisher
Japanese Journal of Applied Physics, Part 1- Regular Papers
Citation
VOL 45, NO 10A, 8010-8013
URI
http://pubs.kist.re.kr/handle/201004/29726
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
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