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dc.contributor.author김광웅-
dc.contributor.author조남기-
dc.contributor.author유성필-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author이정일-
dc.contributor.authorJung Ho PARK-
dc.date.accessioned2015-12-02T14:30:57Z-
dc.date.available2015-12-02T14:30:57Z-
dc.date.issued200610-
dc.identifier.citationVOL 45, NO 10A, 8010-8013-
dc.identifier.issn0021-4922-
dc.identifier.other23639-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/29726-
dc.publisherJapanese Journal of Applied Physics, Part 1- Regular Papers-
dc.subjectInAs/GaAs quantum dot-
dc.subjectlaser diode-
dc.subjectatomic layer epitaxy-
dc.subjectsimultaneous lasing-
dc.titleInAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3㎛ With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy-
dc.typeArticle-
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