Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode

Title
Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode
Authors
강대환김인호정증현정병기안동호김기범
Issue Date
2006-02
Publisher
2006 NVSMW (Non-Volatile Semiconducting Memory Workshop)
URI
http://pubs.kist.re.kr/handle/201004/29865
Appears in Collections:
KIST Publication > Conference Paper
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