Direct Bonding of GOI Wafers with High Annealing Temperatures

Title
Direct Bonding of GOI Wafers with High Annealing Temperatures
Authors
변영태김선호
Keywords
GaAs-on-insulator (GOI); Wafer direct bonding; PECVD oxide; Bonding strength
Issue Date
2006-10
Publisher
한국재료학회지; Korean Journal of Materials Research
Citation
VOL 16, NO 10, 652-655
URI
http://pubs.kist.re.kr/handle/201004/29983
ISSN
1225-0562
Appears in Collections:
KIST Publication > Article
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