High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates

Title
High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates
Authors
강경태임미화김호기김일두홍재민
Issue Date
2007-01
Publisher
Applied physics letters
Citation
VOL 90, 043502-1-043502-3
URI
http://pubs.kist.re.kr/handle/201004/30931
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE