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dc.contributor.author강경태-
dc.contributor.author임미화-
dc.contributor.author김호기-
dc.contributor.author김일두-
dc.contributor.author홍재민-
dc.date.accessioned2015-12-02T14:38:38Z-
dc.date.available2015-12-02T14:38:38Z-
dc.date.issued200701-
dc.identifier.citationVOL 90, 043502-1-043502-3-
dc.identifier.issn0003-6951-
dc.identifier.other25056-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/30931-
dc.publisherApplied physics letters-
dc.titleHigh field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates-
dc.typeArticle-
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