Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory

Title
Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory
Authors
정증현이수연우철이택성김원목김슬참오규환정병기
Issue Date
2007-04
Publisher
Materials Research Society
URI
http://pubs.kist.re.kr/handle/201004/31268
Appears in Collections:
KIST Publication > Conference Paper
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