Optical and structural properties of In0.5Ga0.5As quantum dots with different numbers of stacks grown by atomic layer molecular beam epitaxy: Vertical realignment of weakly coupled quantum dots

Title
Optical and structural properties of In0.5Ga0.5As quantum dots with different numbers of stacks grown by atomic layer molecular beam epitaxy: Vertical realignment of weakly coupled quantum dots
Authors
Ho-Sang KwackByoung-O KimYong-Hoon Cho송진동최원준이정일
Keywords
InGaAs; Quantum dots; stacking; migration enhanced epitaxy
Issue Date
2007-08
Publisher
Nanotechnology
Citation
VOL 18, 315401-1-315401-6
URI
http://pubs.kist.re.kr/handle/201004/31783
ISSN
0957-4484
Appears in Collections:
KIST Publication > Article
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