Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode

Title
Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode
Authors
유성필Y. T. Lee조남기최원준송진동이정일H. S. KwackY. H. Cho
Keywords
Quantum dots; InGaAs; dots in a well
Issue Date
2007-07
Publisher
Journal of applied physics
Citation
VOL 102, 023105-1-023105-5
URI
http://pubs.kist.re.kr/handle/201004/31784
ISSN
0021-8979
Appears in Collections:
KIST Publication > Article
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