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dc.contributor.author정경욱-
dc.contributor.author김광웅-
dc.contributor.author유성필-
dc.contributor.author조남기-
dc.contributor.author박성준-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author이정일-
dc.contributor.author양해석-
dc.date.accessioned2015-12-02T14:45:07Z-
dc.date.available2015-12-02T14:45:07Z-
dc.date.issued200709-
dc.identifier.citationVOL 16, NO 5, 371-376-
dc.identifier.issn12258822-
dc.identifier.other26178-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/31903-
dc.publisher한국진공학회지 (Journal of the Korean Vacuum Society)-
dc.subjectInGaAs-
dc.subjectQuantum-dot-
dc.subjectQuantum well-
dc.subject980 nm-
dc.subjectquantum-dpt laser diode-
dc.titleComparisons of lasing characteristics of InGaAs quantum-dot and quantum well laser diodes-
dc.typeArticle-
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