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dc.contributor.author정경욱-
dc.contributor.author김광웅-
dc.contributor.author유성필-
dc.contributor.author조남기-
dc.contributor.author박성준-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author이정일-
dc.contributor.author양해석-
dc.date.accessioned2015-12-02T14:46:06Z-
dc.date.available2015-12-02T14:46:06Z-
dc.date.issued200708-
dc.identifier.citationVOL 16, NO 2, 357-357-
dc.identifier.other26348-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/32053-
dc.publisher제33회 한국진공학회 하계학술대회-
dc.title980 nm 파장대역을 갖는 InGaAs 양자점 레이저 다이오드의 발진특성-
dc.typeConference Paper-
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