Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative

Title
Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative
Authors
정병기정증현이수연김인호우철안형우김슬참이현석박영욱
Keywords
non-volatile memory; phase change memory material; Ge-doped SbTe; nitrogen
Issue Date
2007-09
Publisher
Euporean Phase Change and Ovonics Symposium
URI
http://pubs.kist.re.kr/handle/201004/32083
Appears in Collections:
KIST Publication > Conference Paper
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