Dislocation related defect states in GaN irradiated with 1 MeV electron-beam

Title
Dislocation related defect states in GaN irradiated with 1 MeV electron-beam
Authors
이동욱하임경김진석김은규고의관한일기
Keywords
GaN; dislocation; defect; threading dislocation densities
Issue Date
2007-09
Publisher
7th International Conference of Nitride Semiconductors
Citation
, 21-21
URI
http://pubs.kist.re.kr/handle/201004/32343
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE