Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Title
Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy
Authors
김지훈박용주박영민송진동이정일김태환
Keywords
Epitaxy; Self-assembly; Electrical properties; optical properties; semiconductor
Issue Date
2007-01
Publisher
Applied surface science
Citation
VOL 253, 3503-3507
URI
http://pubs.kist.re.kr/handle/201004/32436
ISSN
0169-4332
Appears in Collections:
KIST Publication > Article
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