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dc.contributor.authorDo-Hyun Oh-
dc.contributor.authorSoojin Lee-
dc.contributor.author조운조-
dc.contributor.authorJae-Ho Kim-
dc.contributor.authorTae Whan Kim-
dc.date.accessioned2015-12-02T14:49:58Z-
dc.date.available2015-12-02T14:49:58Z-
dc.date.issued200706-
dc.identifier.citationVOL 50, NO 6, 1755-1759-
dc.identifier.issn0374-4884-
dc.identifier.other27002-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/32639-
dc.publisherJournal of the Korean Physical Society-
dc.titleElectron and Hole Storage in a Floating Gate Consisting of Si Nanocrystals Embedded in a SiO2 Layer-
dc.typeArticle-
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