Characteristics of low-k SiOC(-H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor

Title
Characteristics of low-k SiOC(-H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor
Authors
김창영김승현R. Navamathavan최치규정원용
Keywords
low-k material; SiOC(-H) films; PECVD; DMDMS; FTIR; XPS
Issue Date
2007-06
Publisher
Thin solid films
Citation
VOL 516, 340-344
URI
http://pubs.kist.re.kr/handle/201004/32766
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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