Negative thermal quenching in undoped ZnO and Ga-doped ZnO film grown on c-Al2O3 (0001) by plasma-assisted molecular beam epitaxy

Title
Negative thermal quenching in undoped ZnO and Ga-doped ZnO film grown on c-Al2O3 (0001) by plasma-assisted molecular beam epitaxy
Authors
최원국박흥천Basavaraj Angadi정연식최지원
Keywords
Negative thermal quenching; ZnO; Ga-doped ZnO; B-valence band; Vibrational/rotational resonance states; *2008년도 기관고유평가, 개인평가에 반영되었음
Issue Date
2009-10
Publisher
Journal of electroceramics
Citation
VOL 23, 331-334
Abstract
Negative thermal quenching (NTQ) was observed in bound exciton emission line in undoped ZnO and the donor-to-valence-band emission in heavily Gadoped ZnO thin films grown on c-Al2O3 (1000) through low temperature photoluminescence spectra. In both cases, the enhanced feature of PL peak intensity occurred in the temperature range of 35–45 K corresponding to the energies of either excitation to the vibrational/rotational resonance states or the involvement of B-valence band considering the activation energy of about 5 meV.
URI
http://pubs.kist.re.kr/handle/201004/33476
ISSN
1385-3449
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KIST Publication > Article
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