Improved Dielectric Properties of ZrO2-Doped Ba0.6Sr0.4TiO3 Thin Films Deposited by Reactive Magnetron Co-Sputtering
- Improved Dielectric Properties of ZrO2-Doped Ba0.6Sr0.4TiO3 Thin Films Deposited by Reactive Magnetron Co-Sputtering
- 조광환; 강종윤; 윤석진; 이영백
- Dielectric loss; Tunable microwave device; Reactive co-sputtering; Ferroelectric
- Issue Date
- Journal of the Korean Physical Society
- VOL 53, NO 5, 2378-2381
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- KIST Publication > Article
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