High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs

Title
High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs
Authors
송진동김형준신상훈김수연
Keywords
InAs; 2DEG; AlSb
Issue Date
2008-06
Publisher
2008 하계 자기학회
URI
http://pubs.kist.re.kr/handle/201004/34334
Appears in Collections:
KIST Publication > Conference Paper
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