Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure

Title
Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure
Authors
신상훈임주영송진동한석희김태근
Keywords
InAs; AlSb
Issue Date
2007-12
Publisher
ICAMD 2007
URI
http://pubs.kist.re.kr/handle/201004/34339
Appears in Collections:
KIST Publication > Conference Paper
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