Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programming

Title
Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programming
Authors
이수연정증현이택성김원목정병기
Keywords
phase change memory; multilevel; polairty dependence; Ge-doped SbTe
Issue Date
2008-06
Publisher
Applied physics letters
Citation
VOL 92, 243507-1-243507-3
URI
http://pubs.kist.re.kr/handle/201004/34342
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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