Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming

Title
Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming
Authors
이수연정증현박영욱Wu Zhe이택성정병기
Keywords
phase change memory; reliability; field-induced ion migration; electromigration
Issue Date
2008-09
Publisher
Proceedings of European Phase Change and Ovonic Symposium
Citation
, 188-193
URI
http://pubs.kist.re.kr/handle/201004/34611
Appears in Collections:
KIST Publication > Conference Paper
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