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dc.contributor.author조경훈-
dc.contributor.author최창학-
dc.contributor.author홍경표-
dc.contributor.author최주영-
dc.contributor.author정영훈-
dc.contributor.author남산-
dc.contributor.author강종윤-
dc.contributor.author윤석진-
dc.contributor.author이학주-
dc.date.accessioned2015-12-02T15:03:43Z-
dc.date.available2015-12-02T15:03:43Z-
dc.date.issued200807-
dc.identifier.citationVOL 29, NO 7, 684-687-
dc.identifier.issn0741-3106-
dc.identifier.other29314-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/34710-
dc.publisherIEEE Electron Device Letters-
dc.subjectBi5Nb3O15-
dc.subjecthigh-κ-
dc.subjectmetal-insulator-metal (MIM) capacitor-
dc.subjecttemperature coefficient of capacitance (TCC)-
dc.subjectvoltage coefficient of capacitance (VCC)-
dc.titleElectrical Properties of Amorphous Bi5Nb3O15 Thin Film for RF MIM Capacitors-
dc.typeArticle-
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