High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs

Title
High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs
Authors
신상훈송진동김수연김형준장준연한석희
Issue Date
2008-12
Publisher
AMC 2008
URI
http://pubs.kist.re.kr/handle/201004/34767
Appears in Collections:
KIST Publication > Conference Paper
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