Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials

Title
Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials
Authors
정증현안형우이수연김원목하재근정병기
Keywords
phase change memory; Ge-doped SbTe; interfacial adhesion; stress relaxation; doping
Issue Date
2009-01
Publisher
Applied physics letters
Citation
VOL 94, NO 1, 011902-1-011902-3
Abstract
A semiquantitative characterization of the interfacial adhesion of phase change materials is developed, which consists of determining critical adhesion temperature TCA via measuring the probability of adhesion failure with temperature using patterned films. By comparison of TCA values, Ge-doped SbTe Ge-ST is shown to have weaker adhesion than Ge2Sb2Te5 GST , which results from its limited ability in relaxation of crystallization-induced stress. Nitrogen or oxygen doping in Ge-ST produces significant increase in TCA, close to that of GST. This improvement is due to smaller grain size of N-/O-doped Ge-ST, which facilitates the relaxation of the stress via grain boundary diffusion or sliding.
URI
http://pubs.kist.re.kr/handle/201004/34830
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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