Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials
- Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials
- 정증현; 안형우; 이수연; 김원목; 하재근; 정병기
- phase change memory; Ge-doped SbTe; interfacial adhesion; stress relaxation; doping
- Issue Date
- Applied physics letters
- VOL 94, NO 1, 011902-1-011902-3
- A semiquantitative characterization of the interfacial adhesion of phase change materials is
developed, which consists of determining critical adhesion temperature TCA via measuring the probability of adhesion failure with temperature using patterned films. By comparison of TCA
values, Ge-doped SbTe Ge-ST is shown to have weaker adhesion than Ge2Sb2Te5 GST , which results from its limited ability in relaxation of crystallization-induced stress. Nitrogen or oxygen doping in Ge-ST produces significant increase in TCA, close to that of GST. This improvement is due to smaller grain size of N-/O-doped Ge-ST, which facilitates the relaxation of the stress via grain boundary diffusion or sliding.
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