The mechanism behind the selective metal nanoscale etch method for precise metal nanopatterning
- The mechanism behind the selective metal nanoscale etch method for precise metal nanopatterning
- 이병철; 김무현; 제가타; 김상경; 문성욱; 이상엽; 신현준
- Selective metal nanoscale etch method; Kirkendall Effect; Galvanic Displacement; Selective Etching; Nanopatterning; Metal nanowires
- Issue Date
- VOL 20, 065302-1-065302-6
- This paper reports for the first time the exact mechanism of the selective metal nanoscale etch
method (SMNEM), which is a simply controllable and cost-effective approach for metal
nanoscale etching and size reduction. This method is based on the galvanic displacement,
Kirkendall effect, and selective etching. The size reduction is linearly controlled by the galvanic
displacement in the early stage (1 min). In the later stage, a Kirkendall void is formed between
the Ni and Au layer, which is well understood from Fick’s law of diffusion. As matching with
the experimental results, Ni nanowires with 30 ± 4 nm width and 50 ± 7 nm height were easily
fabricated from nanostructures with 150 ± 3 nm width and 110± 2 nm height. The morphology
and position of the Ni nanostructures are all predetermined by their initial conditions. Also
achieved was the fabrication of complicated three-dimensional nanostructures such as Au
nanowires and nanochannels from reduced Ni nanowires by a full replacement reaction.
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