Highly transparent InGaZnO4 thin film transistors using indium-doped ZnO Electrodes on plastic substrate

Title
Highly transparent InGaZnO4 thin film transistors using indium-doped ZnO Electrodes on plastic substrate
Authors
김동훈조남규김호기김일두
Issue Date
2009-04
Publisher
Electrochemical and solid-state letters
Citation
VOL 12, NO 6, h198-h201
Abstract
We investigated indium- In -doping effects on the structural and electrical properties of a ZnO film. It was found that structural properties degraded as In-doping content increased, whereas electrical properties improved. We fabricated fully transparent and flexible InGaZnO4 thin film transistors TFTs using In-doped ZnO electrodes on polyethylene terephthalate PET substrate. The InGaZnO4/MgO-Ba0.6Sr0.4TiO3/3% In-doped ZnO/PET stacks exhibited a high transmittance of 80% in the visible range. The InGaZnO4 TFT with a 3% In-doped ZnO electrode showed a high field effect mobility of 1.04 cm2/V s and a moderate on/off ratio of 7.48 x 105.
URI
http://pubs.kist.re.kr/handle/201004/35077
ISSN
1099-0062
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KIST Publication > Article
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