Highly transparent InGaZnO4 thin film transistors using indium-doped ZnO Electrodes on plastic substrate
- Highly transparent InGaZnO4 thin film transistors using indium-doped ZnO Electrodes on plastic substrate
- 김동훈; 조남규; 김호기; 김일두
- Issue Date
- Electrochemical and solid-state letters
- VOL 12, NO 6, h198-h201
- We investigated indium- In -doping effects on the structural and electrical properties of a ZnO film. It was found that structural
properties degraded as In-doping content increased, whereas electrical properties improved. We fabricated fully transparent and
flexible InGaZnO4 thin film transistors TFTs using In-doped ZnO electrodes on polyethylene terephthalate PET substrate. The
InGaZnO4/MgO-Ba0.6Sr0.4TiO3/3% In-doped ZnO/PET stacks exhibited a high transmittance of 80% in the visible range. The
InGaZnO4 TFT with a 3% In-doped ZnO electrode showed a high field effect mobility of 1.04 cm2/V s and a moderate on/off ratio of 7.48 x 105.
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