MOCVD Growth of Thermoelectric BiSbTe3 films on surface-trated Sapphire substrates

Title
MOCVD Growth of Thermoelectric BiSbTe3 films on surface-trated Sapphire substrates
Authors
권성도김진상
Keywords
MOCVD; Surface morphology; Thermoelectric; Bismuth telluride
Issue Date
2009-04
Publisher
Journal of the Korean Physical Society
Citation
VOL 54, NO 4, 1589-1593
Abstract
Metal organic chemical vapor deposition(MOCVD) has been used to grow BiSbTe3 lms on (0001) sapphire substrates. Prior to growth, some of the substrates were subjected to chemical treatment. The impact of this process on the surface morphology and on the crystalline quality of the resulting BiSbTe3 lms is investigated. We demonstrated that the surface treatment of a sapphire substrates with a potassium-containing solution has a marked e ect on the surface morphology of the resulting layers. In particular, BiSbTe3 layers grown on sapphire substrates treated with a potassium-containing solution exhibited a high nucleation density during the initial growth stage, leading to a smooth mirror-like morphology. In contrast, the growth of lms on sapphire substrates without treatment was found to result in randomsized island-like surface defects Untreated substrates led to multi-oriented lms while lms on treated substrates were close to epitaxially oriented. We believe that the formation of nanoscale defects on the substrate surface during chemical treatment may account for the observed improved surface morphology.
URI
http://pubs.kist.re.kr/handle/201004/35095
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE