Improved electrical resistive switching of MnOx based nonvolatile memory devices

Improved electrical resistive switching of MnOx based nonvolatile memory devices
MnOx; resistive switching; nonvolatile memory devices; Ti electrode; device yield
Issue Date
2009 Materials Research Society spring meeting
Many metal-insulator-metal systems show electrically induced resistive switching effects and have been proposed at the future non-volatile memories. 100-nm-thick MnOx thin films with polycrystalline structure were fabricated on Pt/Ti/SiO2/Si single crystal substrates at 20oC by radio-frequency sputtering. MnOx exhibits irreversible memory switching from a low resistance state(LRS; on state) to a high resistance state(HRS; off state), with the off to on resistance ratio of greater than 100. To improve the device yield and the process-voltages-distribution, the titanium top electrode and the NiOx buffer layers are used. From room temperature current-voltage measurements of these structures, reproducible resistive switching behaviors were observed. More than 105 repetitive switching cycles were demonstrated with a high current on/off ratio. The program voltage and erase voltages, Vp and Ve , are below 2V, respectively. ION/IOFF is higher than 100. Distribution of voltage, Vset (Δ/σ) and Vreset (Δ/σ), are 11 and 8.4, respectively. Distribution of resistance, Ron(Δ/σ) and Roff(Δ/σ) are 13 and 304, respectively. Pulse reset switching time is lower than 20 ns. The dominant conduction mechanisms will also be discussed.
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