Electric field control of spins in a silicon two-dimensional electron gas
- Electric field control of spins in a silicon two-dimensional electron gas
- R. JANSEN; 민병철; S.P. DASH; R.S. Patel; M. P. De Jong
- Issue Date
- 2009 APS March Meeting
- Electric ¯eld control of spins in a silicon two-
dimensional electron gas. R. JANSEN, B.C. MIN, S. P. DASH,
R. S. PATEL, M. P. DE JONG, University of Twente, MESA+ Insti-
tute for Nanotechnology, The Netherlands; A key objective in the
development of semiconductor spintronics is the active control of spins
in semiconductors. The manipulation by electric rather than magnetic
¯elds is preferred as this is more e±cient for nanoscale high frequency
devices. Proposals for electric spin control, for example for use in a spin
transistor, have so far focused on mechanisms that require spin-orbit in-
teraction. Unfortunately, in silicon, the mainstream semiconductor, the
weak spin-orbit interaction renders these mechanisms unsuited. Hence,
alternative approaches are paramount to the success of semiconductor
spintronics. Here we demonstrate spin control by electric ¯elds in a sil-
icon two-dimensional electron gas (2DEG), exploiting the discrete elec-
tronic structure of the 2DEG. This, in combination with an electric ¯eld,
allows spin manipulation without the need for spin-orbit interaction.
The spin control is manifested as resonances in the tunnel magnetore-
sistance between the Si 2DEG and a ferromagnetic tunnel contact, with
amplitude of up to 8%.
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