Fabrication of silicon nanodots on insulator using block copolymer thin film
- Fabrication of silicon nanodots on insulator using block copolymer thin film
- 강길범; 김용태; 박정호; 김성일; 손영수
- nanodots; Soft lithography; Block copolymer
- Issue Date
- Current applied physics : the official journal of the Korean Physical Society
- VOL 9, NO 2, e197-e200
- Dense and periodically distributed silicon nanodots were fabricated on silicon dioxide layer using block copolymer. Self-assembling resists were coated on the polysilicon/oxide/silicon substrate to produce a layer of uniformly distributed parallel nano-cylinders of polymethyl methacrylate (PMMA) in a polystyrene (PS) matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing, forming a PS template to transfer the pattern. The patterned cylindrical vacant cavities of the PS template were approximately 22 nm in diameter, 40 nm deep, and 50 nm apart. 5-nm- and 6-nm-thick Ni thin films were deposited by using an e-beam evaporator. The PS template was removed by a lift-off process using N-formyldimethylamine (DMF). Arrays of Ni nanodots were dry-etched using fluorine-based reactive ion etching (RIE), forming silicon nanodots. The sizes of the silicon nanodots were in the range of 10 nm to 30 nm, depending on the etching time.
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