A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling

Title
A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling
Authors
이수연정증현이택성김원목정병기
Keywords
cycling endurance; phase-change memory (PCM); reliability
Issue Date
2009-05
Publisher
IEEE Electron Device Letters
Citation
VOL 30, NO 5, 448-450
Abstract
Abstract—Using a phase-change memory (PCM) device composed of Ge2Sb2Te5 (GST), we studied the mechanism of the SET-stuck failure (SSF), a constantly low-resistance state during write/erase (W/E) cycling. The SSF state was characterized with increased RESET current and decreased threshold voltage, which were thought to be due to depletion of Ge and enrichment of Sb inside the active volume of GST. Moreover, we found that device characteristics of an SSF-PCM could be recovered by reversing bias polarity and the repaired device could endure many W/E cycles, implying that field-induced ion migration was the major cause of the SSF of a PCM.
URI
http://pubs.kist.re.kr/handle/201004/35262
ISSN
0741-3106
Appears in Collections:
KIST Publication > Article
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