Microstructure of the Strain-induced Fe/MgO/InxGa1-xAs Heterostructure for Spin injection

Title
Microstructure of the Strain-induced Fe/MgO/InxGa1-xAs Heterostructure for Spin injection
Authors
김경호김형준신일재구현철장준연한석희
Keywords
spin-FET; Epitaxial relationship; Fe; MgO; semiconductor
Issue Date
2009-05
Publisher
Intermag 2009
Abstract
The injection of spin polarized electrons from a ferromagnetic (FM) metal into a semiconductor has been a key issue for the applications of spin-based electronics such as spin-FET. The magnetic property of the FM layer considerably depends on the micorstructure and morphology. Recently, the insertin of an MgO tunnel barrier has led to not only remove conductivity mismatch between FM and semiconductors but also improve spin injection efficiency.
URI
http://pubs.kist.re.kr/handle/201004/35328
Appears in Collections:
KIST Publication > Conference Paper
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