On-Film Formation of Bi Nanowires with Extraordinary Electron Mobility
- On-Film Formation of Bi Nanowires with Extraordinary Electron Mobility
- 심우영; 함진희; 이경일; 정원용; Mark Johnson; 이우영
- Issue Date
- Nano letters
- VOL 9, NO 1, 18-22
- A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 °C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diametertunable Bi nanowires can be produced by controlling the mean grain size of the film, which is dependent upon the thickness of the film. Four-terminal devices based on individual Bi nanowires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi nanowires. Unusual transport properties, including a mobility value of 76900 cm2/(V s) and a mean free path of 1.35 μm in a 120 nm Bi nanowire, were observed at room temperature.
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