On-Film Formation of Bi Nanowires with Extraordinary Electron Mobility

Title
On-Film Formation of Bi Nanowires with Extraordinary Electron Mobility
Authors
심우영함진희이경일정원용Mark Johnson이우영
Issue Date
2009-01
Publisher
Nano letters
Citation
VOL 9, NO 1, 18-22
Abstract
A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 °C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diametertunable Bi nanowires can be produced by controlling the mean grain size of the film, which is dependent upon the thickness of the film. Four-terminal devices based on individual Bi nanowires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi nanowires. Unusual transport properties, including a mobility value of 76900 cm2/(V s) and a mean free path of 1.35 μm in a 120 nm Bi nanowire, were observed at room temperature.
URI
http://pubs.kist.re.kr/handle/201004/35379
ISSN
1530-6984
Appears in Collections:
KIST Publication > Article
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