High Stability InGaZnO4 Thin Film Transistors Using Sputter-Depostied PMMA Gate Insulators and PMMA Passivation Layers

Title
High Stability InGaZnO4 Thin Film Transistors Using Sputter-Depostied PMMA Gate Insulators and PMMA Passivation Layers
Authors
김동훈최승훈조남규장영은김호기홍재민김일두
Issue Date
2009-06
Publisher
Electrochemical and solid-state letters
Citation
VOL 12, NO 8, H296-H298
Abstract
We report on the fabrication and characterization of sputter-deposited poly methyl methacrylate PMMA thin films used as gate insulators as well as passivation layers in high performance InGaZnO4 thin-film transistors TFTs . Sputter-deposited PMMA thin films exhibited a dielectric constant of 4.3 and low leakage current characteristics 2 10−8 A/cm2 at 0.3 MV/cm . The InGaZnO4 TFTs utilizing PMMA gate insulators and PMMA passivation layers exhibited a high on/off current ratio of 4.08 106 and a high field-effect mobility of 36.1 cm2/V s. Threshold voltage and field-effect mobility remained constant after aging in air atmosphere for 5 months.
URI
http://pubs.kist.re.kr/handle/201004/35410
ISSN
1099-0062
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KIST Publication > Article
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