Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry

Title
Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry
Authors
정용우T. H. GhongJ. S. ByunY. D. KimH. J. KimY. C. Chang신상훈송진동
Keywords
AlSb; MBE; ellipsometry
Issue Date
2009-06
Publisher
Applied physics letters
Citation
VOL 94, 231913-1-231913-3
Abstract
We present pseudodielectric function data = 1 +i 2 from 0.7 to 5.0 eV of oxide-free AlSb that are the closest representation to date of the intrinsic bulk dielectric response of the material. Measurements were done on a 1.5 m thick film grown on 001 GaAs by molecular beam epitaxy. Data were obtained with the film in situ to avoid oxidation artifacts. Overlapping critical-point CP structures in the E2 energy region were identified by means of band-structure calculations done with the linear augmented Slater-type orbital method. Calculated CP energies agree well with those obtained from data, confirming the validity of the calculations.
URI
http://pubs.kist.re.kr/handle/201004/35448
ISSN
0003-6951
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KIST Publication > Article
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