p-n junctions formed with carbon nanotubes deposited onto Ga-doped ZnO thin films
- p-n junctions formed with carbon nanotubes deposited onto Ga-doped ZnO thin films
- 송용원; 이재상; 유승환; A. Martinez; S. Yamashita; 이상렬
- p-n diode; carbon nanotube; ZnO; Ga-doped ZnO
- Issue Date
- International Conference on Materials for Advanced Technologies (ICMAT) 2009
- Expecting that ZnO can pave the way for next generation electronic and photonic devices, recently, it has attracted wide attention with the notable advantages such as good transparency, material stability, wide bandgap, and high exciton binding energy at room temperature. In order to design, develop and utilize the engineered band-structures of ZnO, it is considered as primary requirement to achieve both p- and n-type ZnO materials. However, since the successful window for process condition to achieve the p-type ZnO still remains very narrow, we outsource more efficient way to fine the p-type materials with carbon nanotubes (CNTs) that highlights inherent p-type semiconducting properties. Moreover, thanks to the tunable transparency of the CNT films, they can give an excellent harmony with n-type Ga-doped ZnO (GZO) films for transparent electronic devices. Additionally, Spray method for the CNT deposition can be developed to a future printing process for device fabrication, therefore cost-effective mass production of the devices. However, unfortunately, no previous works on the CNT-GZO p-n junction has been reported in spite of its huge potential for future applications.
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