Electronic Structure of Co-doped ZnO Thin Films by X-ray Absorption and Emission Spectroscopy
- Electronic Structure of Co-doped ZnO Thin Films by X-ray Absorption and Emission Spectroscopy
- Sanjeev Gautam; P. Thakur; 채근화; G. S. Chang; M. Subramanain; R. Jayavel; K. Asokan
- X-ray absorption; X-ray emission; Diluted magnetic semiconductors; Oxygen vacancy
- Issue Date
- Journal of the Korean Physical Society
- VOL 55, NO 1, 167-172
- The electronic structure of Co-doped ZnO thin films, synthesized with a nominal composition
of Zn1−xCoxO (x = 0.03, 0.05, 0.7, 0.10, and 0.15) by using spray pyrolysis method, has been
investigated using near edge X-ray absorption fine structure (NEXAFS) measurements at the O
K- and the Co L3,2-edges and using resonant inelastic X-ray scattering (RIXS) measurements at
Co L3,2-edge. All the prepared Zn1−xCoxO thin films showed ferromagnetic behavior at room
temperature, as measured by using an alternating gradient force magnetometer (AGFM). The
intensity of the pre-edge spectral feature at the O K-edge increases with the Co concentration,
which clearly reveals that there is strong hybridization of O 2p − Co 3d atoms in the ZnO matrix.
Spectral features of the Co L3,2-edge NEXAFS exhibit multiple absorption peaks and are similar to
those of Co2+ ions coordinated in tetrahedral symmetry by four oxygen atoms. These results clearly
demonstrate that Co is in a 2+ state, substituting at the Zn site. Co L3,2-edge RIXS measurements
show that the substitution by Co atoms can explain the magnetic interaction in Co-doped ZnO.
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